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Found 14 results for the keyword ganwafer. Time 0.007 seconds.
Ganwafer – One of Semiconductor Wafer Manufacturing CompaniesGanwafer is a top-class enterprise for compound semiconductor material integrating semiconductor crystal growth, process development, and epitaxy.
Wafer Supplier of Compound Semiconductor Materials and Epi ServiceGanwafer, as a semiconductor wafer supplier, offers semiconductor substrate and epitaxial wafers of SiC, GaN, III-V group compound and etc.
Technical R D Team with Rich Experience in SemiconductorsTechnical R D team with rich experience in semiconductors makes Ganwafer capable to produce advanced wafer meet your needs
Freestanding GaN (Gallium Nitride) Substrate Grown by HVPEFree-standing GaN substrate wafer with low dislocation density, uniform surface and low defect density is for UHB-LED and LD.
GaN Wafer Including Substrate, Template Epitaxy WaferGaN (gallium nitride) wafer – wide band gap material provides higher efficiency and power density for gallium nitride chips.
Technology for Manufacturing SiC, GaN, III-V Semiconductor WafersTechnology: HVPE, MOCVD, MBE, etc are used by semiconductor wafer fabs to grow SiC wafers, GaN wafers, III-V wafers with low defects and low impurity.
Compound Semiconductor Materials: SiC, GaN, III-V Group MaterialCompound semiconductor materials including III-V wafers, SiC, GaN and other semiconductor wafers are offered with low defect density
Epi-ready Semi-Insulating Freestanding GaN (Gallium Nitride) SubstrateSemi-insulating Freestanding GaN (Gallium Nitride) Substrate grown by HVPE is less or free macro defect density for RF device.
N-Type GaN (Gallium Nitride) Freestanding Substrate WaferN-type GaN free-standing wafer is undoped or doped with Silicon for high power and high frequency devices: satellites, power amplifiers.
GaN on Sapphire HEMT Wafer with High Power DensityGaN on Sapphire HEMT wafer is epitaxially grown with high-quality, high-uniformity AlGaN / GaN heterostructures for power or RF application.
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