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Found 21 results for the keyword epitaxy. Time 0.005 seconds.
Ganwafer – One of Semiconductor Wafer Manufacturing CompaniesGanwafer is a top-class enterprise for compound semiconductor material integrating semiconductor crystal growth, process development, and epitaxy.
GaN Wafer Including Substrate, Template Epitaxy WaferGaN (gallium nitride) wafer – wide band gap material provides higher efficiency and power density for gallium nitride chips.
Semiconductor wafer,Single Crystal wafer,wafer substrate-XIAMEN POWERWPAM-XIAMEN produce wide range of Compound Semiconductor Wafer and LED wafer substrate - single crystal wafer: Silicon Carbide Wafer(Substrate), Gallium Nitride Wafer(Substrate), Gallium Nitride HEMT,GaAs Wafer(Substrate)
Technology for Manufacturing SiC, GaN, III-V Semiconductor WafersTechnology: HVPE, MOCVD, MBE, etc are used by semiconductor wafer fabs to grow SiC wafers, GaN wafers, III-V wafers with low defects and low impurity.
Wafer Supplier of Compound Semiconductor Materials and Epi ServiceGanwafer, as a semiconductor wafer supplier, offers semiconductor substrate and epitaxial wafers of SiC, GaN, III-V group compound and etc.
Scientific Publications | InRel-NPowerWe've updated publication list on our website, and reached a milestone! Feel curious to dive into more than 50 publications investigating Gallium Nitride power devices!
Jiangsu Knock Medical Technology Co., Ltd. - YouTubeJiangsu Knock Medical Technology Co., Ltd. was established in 2020. The company integrates all aspects of chip epitaxy, chip packaging, ultraviolet light sen...
AlGaN / GaN on Silicon HEMT Wafer with High 2DEG MobilityGaN on silicon substrate wafer is offered with HEMT or template structure used in D-mode / E-mode power or RF application.
Compound Semiconductor Materials: SiC, GaN, III-V Group MaterialCompound semiconductor materials including III-V wafers, SiC, GaN and other semiconductor wafers are offered with low defect density
Freestanding GaN (Gallium Nitride) Substrate Grown by HVPEFree-standing GaN substrate wafer with low dislocation density, uniform surface and low defect density is for UHB-LED and LD.
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