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Found 14 results for the keyword epitaxial. Time 0.008 seconds.
Semiconductor wafer,Single Crystal wafer,wafer substrate-XIAMEN POWERWPAM-XIAMEN produce wide range of Compound Semiconductor Wafer and LED wafer substrate - single crystal wafer: Silicon Carbide Wafer(Substrate), Gallium Nitride Wafer(Substrate), Gallium Nitride HEMT,GaAs Wafer(Substrate)
Wafer Supplier of Compound Semiconductor Materials and Epi ServiceGanwafer, as a semiconductor wafer supplier, offers semiconductor substrate and epitaxial wafers of SiC, GaN, III-V group compound and etc.
Technology for Manufacturing SiC, GaN, III-V Semiconductor WafersTechnology: HVPE, MOCVD, MBE, etc are used by semiconductor wafer fabs to grow SiC wafers, GaN wafers, III-V wafers with low defects and low impurity.
LED Light | LED lighting Manufacturers Suppliers in China | KYDLEDAs a leading top LED light manufacturers and suppliers, wholesaler, distributor in China, we manufacture commercial LED lighting, office LED lighting, outdoor LED lighting and industrial LED lighting wordwide at the most
GaN on Sapphire HEMT Wafer with High Power DensityGaN on Sapphire HEMT wafer is epitaxially grown with high-quality, high-uniformity AlGaN / GaN heterostructures for power or RF application.
GaN Wafer Including Substrate, Template Epitaxy WaferGaN (gallium nitride) wafer – wide band gap material provides higher efficiency and power density for gallium nitride chips.
GaN on SiC (Silicon Carbdie) HEMT Wafer for RF or PowerThe transport performance of heterostructure 2DEG GaN on SiC substrate wafer is better than GaN on Si / sapphire substrate.
Ganwafer – One of Semiconductor Wafer Manufacturing CompaniesGanwafer is a top-class enterprise for compound semiconductor material integrating semiconductor crystal growth, process development, and epitaxy.
Mobile Concrete Batching Plant - A convenient concrete batching plantThis series mobile crushing and screening plant is the crushing equipments for rocks and construction waste, which is explored and developed by our company. It expands the conception of primary and secondary crushing ope
GaN on GaN Homoepitaxial Growth with Low Dislocation DensityGaN on GaN technology is grown GaN epi layers on homogeneous substrate, is an effective way to reduce dislocation density.
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