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Found 16 results for the keyword algan. Time 0.020 seconds.
AlGaN / GaN on Silicon HEMT Wafer with High 2DEG MobilityGaN on silicon substrate wafer is offered with HEMT or template structure used in D-mode / E-mode power or RF application.
GaN on Sapphire HEMT Wafer with High Power DensityGaN on Sapphire HEMT wafer is epitaxially grown with high-quality, high-uniformity AlGaN / GaN heterostructures for power or RF application.
Scientific Publications | InRel-NPowerWe've updated publication list on our website, and reached a milestone! Feel curious to dive into more than 50 publications investigating Gallium Nitride power devices!
GaN on SiC (Silicon Carbdie) HEMT Wafer for RF or PowerThe transport performance of heterostructure 2DEG GaN on SiC substrate wafer is better than GaN on Si / sapphire substrate.
GaN Wafer Including Substrate, Template Epitaxy WaferGaN (gallium nitride) wafer – wide band gap material provides higher efficiency and power density for gallium nitride chips.
Technology for Manufacturing SiC, GaN, III-V Semiconductor WafersTechnology: HVPE, MOCVD, MBE, etc are used by semiconductor wafer fabs to grow SiC wafers, GaN wafers, III-V wafers with low defects and low impurity.
Compound Semiconductor Materials: SiC, GaN, III-V Group MaterialCompound semiconductor materials including III-V wafers, SiC, GaN and other semiconductor wafers are offered with low defect density
Wafer Supplier of Compound Semiconductor Materials and Epi ServiceGanwafer, as a semiconductor wafer supplier, offers semiconductor substrate and epitaxial wafers of SiC, GaN, III-V group compound and etc.
GaN on GaN Homoepitaxial Growth with Low Dislocation DensityGaN on GaN technology is grown GaN epi layers on homogeneous substrate, is an effective way to reduce dislocation density.
N-Type GaN (Gallium Nitride) Freestanding Substrate WaferN-type GaN free-standing wafer is undoped or doped with Silicon for high power and high frequency devices: satellites, power amplifiers.
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