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The InRel-NPower project researches high voltage GaN and AlN transistors for application in power electronics, from growing the raw material to packaging and a demonstration of its potential in a final device. More in te Visit Our goals | InRel-NPower (http://www.inrel-npower.eu/node/22)
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Welcome to InRel-NPower | InRel-NPower
The InRel-NPower project aims to contribute to this world-wide challenge through the development of GaN- and AlN-based power devices. We hope to aid you in your exploration of this topic through our site or at one of the
http://inrel-npower.eu/
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Scientific Publications | InRel-NPower
We've updated publication list on our website, and reached a milestone! Feel curious to dive into more than 50 publications investigating Gallium Nitride power devices!
http://www.inrel-npower.eu/view/biblio/year
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GaN on SiC (Silicon Carbdie) HEMT Wafer for RF or Power
The transport performance of heterostructure 2DEG GaN on SiC substrate wafer is better than GaN on Si / sapphire substrate.
https://www.ganwafer.com/product/gan-on-sic-hemt-wafer/
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GaN on Sapphire HEMT Wafer with High Power Density
GaN on Sapphire HEMT wafer is epitaxially grown with high-quality, high-uniformity AlGaN / GaN heterostructures for power or RF application.
https://www.ganwafer.com/product/gan-on-sapphire-hemt-wafer/
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